Degradation analysis with characteristics and simulations of 265 nm UV-C LED

We report the degradation study on AlGaN-based 265 nm ultraviolet light-emitting diodes (UV-LEDs) under a series of constant current stress. The failure mechanisms were investigated systematically by measuring optical and electrical characteristics LEDs before after aging. variation carrier concentration in active region was analyzed capacitance–voltage. Combining extracted apparent charge distribution profiles with simulation results devices stress, we found that change multiple quantum wells related to donor diffusion n-side. On p-side, both acceptor electron blocking layer (EBL) defects p-GaN contact also be change. reduction EBL doping has contributed an increase diode depletion width during changes stressing indicate compensating effect occurred p-type close wells, which leads power UV-LEDs.